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IXTK22N100L Технические параметры

IXYS  IXTK22N100L technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 5 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 22A Tc
Drive Voltage (Max Rds On, Min Rds On) 20V
Number of Elements 1 Element
Power Dissipation (Max) 700W Tc
Turn Off Delay Time 80 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2007
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Resistance 600Ohm
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED, UL RECOGNIZED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Pin Count 3
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 700W
Case Connection ISOLATED
Turn On Delay Time 36 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 600m Ω @ 11A, 20V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7050pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 270nC @ 15V
Rise Time 35ns
Drain to Source Voltage (Vdss) 1000V
Vgs (Max) ±30V
Fall Time (Typ) 50 ns
Continuous Drain Current (ID) 22A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 1kV
Pulsed Drain Current-Max (IDM) 50A
Height 26.16mm
Length 19.96mm
Width 5.13mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IXTK22N100L Документы

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