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IXTK250N10 Технические параметры

IXYS  IXTK250N10 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 250A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 730W Tc
Turn Off Delay Time 120 ns
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Series MegaMOS™
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Свойство продукта Значение свойства
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 730W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5m Ω @ 90A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 12700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 430nC @ 10V
Rise Time 40ns
Vgs (Max) ±20V
Fall Time (Typ) 55 ns
Continuous Drain Current (ID) 250A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.005Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 1000A
Avalanche Energy Rating (Eas) 4000 mJ
RoHS Status RoHS Compliant
Lead Free Lead Free
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IXTK250N10 Документы

IXTK250N10 brand manufacturers: IXYS, Anli stock, IXTK250N10 reference price.IXYS. IXTK250N10 parameters, IXTK250N10 Datasheet PDF and pin diagram description download.You can use the IXTK250N10 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IXTK250N10 pin diagram and circuit diagram and usage method of function,IXTK250N10 electronics tutorials.You can download from the Anli.