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IXTL2N450 Технические параметры
IXYS IXTL2N450 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | IXYS | |
| Factory Lead Time | 24 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | ISOPLUSi5-Pak™ | |
| Number of Pins | 3Pins | |
| Current - Continuous Drain (Id) @ 25℃ | 2A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 220W Tc | |
| Turn Off Delay Time | 100 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Published | 2013 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Reach Compliance Code | unknown | |
| Element Configuration | Single | |
| Power Dissipation | 220W | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 23 Ω @ 1A, 10V | |
| Vgs(th) (Max) @ Id | 6V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 6900pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 156nC @ 10V | |
| Rise Time | 38ns | |
| Drain to Source Voltage (Vdss) | 4500V | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 205 ns | |
| Continuous Drain Current (ID) | 2A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | 4.5kV | |
| RoHS Status | ROHS3 Compliant |
IXTL2N450 Документы
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