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IXTL2X180N10T Технические параметры
IXYS IXTL2X180N10T technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | IXYS | |
| Factory Lead Time | 30 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | ISOPLUSi5-Pak™ | |
| Number of Pins | 5Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 42 ns | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tube | |
| Series | Trench™ | |
| Published | 2012 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 5Terminations | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Max Power Dissipation | 150W | |
| Terminal Position | SINGLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Pin Count | 5 | |
| Qualification Status | Not Qualified | |
| Configuration | COMPLEX | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 150W | |
| Case Connection | ISOLATED | |
| FET Type | 2 N-Channel (Dual) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 7.4m Ω @ 50A, 10V | |
| Vgs(th) (Max) @ Id | 4.5V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 6900pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 151nC @ 10V | |
| Rise Time | 54ns | |
| Drain to Source Voltage (Vdss) | 100V | |
| Fall Time (Typ) | 31 ns | |
| Continuous Drain Current (ID) | 100A | |
| Drain-source On Resistance-Max | 0.0074Ohm | |
| Drain to Source Breakdown Voltage | 100V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Standard | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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