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IXTP48P05T Технические параметры

IXYS  IXTP48P05T technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 24 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 48A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 150W Tc
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series TrenchP™
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Terminal Position SINGLE
Reach Compliance Code unknown
Свойство продукта Значение свойства
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 30m Ω @ 24A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3660pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V
Drain to Source Voltage (Vdss) 50V
Vgs (Max) ±15V
Continuous Drain Current (ID) 48A
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.03Ohm
Pulsed Drain Current-Max (IDM) 150A
DS Breakdown Voltage-Min 50V
Avalanche Energy Rating (Eas) 300 mJ
RoHS Status ROHS3 Compliant

IXTP48P05T Документы

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