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IXTP7N60P Технические параметры

IXYS  IXTP7N60P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 7A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 150W Tc
Turn Off Delay Time 65 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PolarHV™
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Voltage - Rated DC 600V
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 7A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Pin Count 3
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 150W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.1 Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id 5.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1080pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 27ns
Vgs (Max) ±30V
Fall Time (Typ) 26 ns
Continuous Drain Current (ID) 7A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 7A
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 14A
Avalanche Energy Rating (Eas) 400 mJ
Height 9.15mm
Length 10.66mm
Width 4.83mm
RoHS Status RoHS Compliant
Lead Free Lead Free

IXTP7N60P Документы

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