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IXTP94N20X4 Технические параметры

IXYS  IXTP94N20X4 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220
Mfr IXYS
Package Tube
Product Status Active
Current - Continuous Drain (Id) @ 25℃ 94A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Power Dissipation (Max) 360W (Tc)
Base Product Number IXTP94
Vds - Drain-Source Breakdown Voltage 200 V
Typical Turn-On Delay Time 18 ns
Vgs th - Gate-Source Threshold Voltage 4.5 V
Pd - Power Dissipation 360 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 175 C
Vgs - Gate-Source Voltage - 20 V, + 20 V
Unit Weight 0.068784 oz
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 300
Mounting Styles Through Hole
Channel Mode Enhancement
Manufacturer IXYS
Свойство продукта Значение свойства
Brand IXYS
Qg - Gate Charge 77 nC
Rds On - Drain-Source Resistance 10.6 mOhms
RoHS Details
Typical Turn-Off Delay Time 97 ns
Id - Continuous Drain Current 94 A
Series Ultra X4
Operating Temperature -55°C ~ 175°C (TJ)
Packaging Tube
Subcategory MOSFETs
Configuration Single
Number of Channels 1 ChannelChannel
FET Type N-Channel
Rds On (Max) @ Id, Vgs 10.6mOhm @ 47A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 77 nC @ 10 V
Rise Time 9 ns
Drain to Source Voltage (Vdss) 200 V
Vgs (Max) ±20V
Product Type MOSFET
Transistor Type 1 N-Channel
FET Feature -
Product Category MOSFET
Просмотр сходства
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