Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
IXTQ110N055P Технические параметры
IXYS IXTQ110N055P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | IXYS | |
| Factory Lead Time | 10 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-3P-3, SC-65-3 | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 110A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 390W Tc | |
| Turn Off Delay Time | 66 ns | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tube | |
| Series | PolarHT™ | |
| Published | 2006 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| Additional Feature | AVALANCHE RATED | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Pin Count | 3 | |
| Qualification Status | Not Qualified | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 390W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 27 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 13.5m Ω @ 500mA, 10V | |
| Vgs(th) (Max) @ Id | 5.5V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 2210pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 76nC @ 10V | |
| Rise Time | 53ns | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 45 ns | |
| Continuous Drain Current (ID) | 110A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | 55V | |
| Pulsed Drain Current-Max (IDM) | 250A | |
| Avalanche Energy Rating (Eas) | 1000 mJ | |
| Height | 20.3mm | |
| Length | 15.8mm | |
| Width | 4.9mm | |
| RoHS Status | ROHS3 Compliant |
IXTQ110N055P Документы
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ