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IXTQ140N10P Технические параметры

IXYS  IXTQ140N10P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 24 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 140A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 600W Tc
Turn Off Delay Time 85 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series PolarHT™
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Resistance 11MOhm
Свойство продукта Значение свойства
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Pin Count 3
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 600W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11m Ω @ 70A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 155nC @ 10V
Rise Time 50ns
Vgs (Max) ±20V
Fall Time (Typ) 26 ns
Continuous Drain Current (ID) 140A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 2500 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IXTQ140N10P Документы

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