Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
IXTQ23N60Q Технические параметры
IXYS IXTQ23N60Q technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | IXYS | |
| Mount | Through Hole | |
| Surface Mount | NO | |
| Number of Pins | 3Pins | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| RoHS | Compliant | |
| Turn Off Delay Time | 45 ns | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Package Style | FLANGE MOUNT | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | IXTQ23N60Q | |
| Package Shape | RECTANGULAR | |
| Manufacturer | IXYS Corporation | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | IXYS CORP | |
| Risk Rank | 5.84 | |
| Part Package Code | TO-3P | |
| Drain Current-Max (ID) | 23 A | |
| JESD-609 Code | e3 | |
| Pbfree Code | Yes | |
| Terminal Finish | Matte Tin (Sn) | |
| Max Operating Temperature | 150 °C | |
| Min Operating Temperature | -55 °C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Additional Feature | AVALANCHE RATED | |
| Max Power Dissipation | 400 W | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 400 W | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Rise Time | 20 ns | |
| Drain to Source Voltage (Vdss) | 600 V | |
| Polarity/Channel Type | N-CHANNEL | |
| Continuous Drain Current (ID) | 23 A | |
| Gate to Source Voltage (Vgs) | 30 V | |
| Drain-source On Resistance-Max | 0.32 Ω | |
| Drain to Source Breakdown Voltage | 600 V | |
| Pulsed Drain Current-Max (IDM) | 92 A | |
| Input Capacitance | 3.3 nF | |
| DS Breakdown Voltage-Min | 600 V | |
| Avalanche Energy Rating (Eas) | 1500 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Drain to Source Resistance | 320 mΩ | |
| Rds On Max | 320 mΩ |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ