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IXTQ24N55Q Технические параметры
IXYS IXTQ24N55Q technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | IXYS | |
| Package / Case | TO-3P-3 | |
| Surface Mount | NO | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| RoHS | Details | |
| Mounting Styles | Through Hole | |
| Transistor Polarity | N-Channel | |
| Vds - Drain-Source Breakdown Voltage | 550 V | |
| Id - Continuous Drain Current | 24 A | |
| Rds On - Drain-Source Resistance | 270 mOhms | |
| Vgs - Gate-Source Voltage | - 30 V, + 30 V | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Pd - Power Dissipation | 400 W | |
| Channel Mode | Enhancement | |
| Factory Pack QuantityFactory Pack Quantity | 30 | |
| Typical Turn-Off Delay Time | 46 ns | |
| Typical Turn-On Delay Time | 16 ns | |
| Unit Weight | 0.194007 oz | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Package Style | FLANGE MOUNT | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | IXTQ24N55Q | |
| Package Shape | RECTANGULAR | |
| Number of Elements | 1 Element |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Risk Rank | 5.39 | |
| Drain Current-Max (ID) | 24 A | |
| Packaging | Tube | |
| Series | IXTQ24N55 | |
| JESD-609 Code | e3 | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | Single | |
| Number of Channels | 1 ChannelChannel | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Rise Time | 20 ns | |
| Polarity/Channel Type | N-CHANNEL | |
| Transistor Type | 1 N-Channel | |
| Drain-source On Resistance-Max | 0.27 Ω | |
| Pulsed Drain Current-Max (IDM) | 96 A | |
| DS Breakdown Voltage-Min | 550 V | |
| Avalanche Energy Rating (Eas) | 1500 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Height | 20.3 mm | |
| Length | 15.8 mm | |
| Width | 4.9 mm |
Индекс :
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