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IXTQ26P20P Технические параметры

IXYS  IXTQ26P20P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 24 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 26A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 300W Tc
Turn Off Delay Time 46 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series PolarP™
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish PURE TIN
Additional Feature AVALANCHE RATED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 170m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2740pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Rise Time 33ns
Drain to Source Voltage (Vdss) 200V
Vgs (Max) ±20V
Fall Time (Typ) 21 ns
Continuous Drain Current (ID) 26A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.17Ohm
Drain to Source Breakdown Voltage -200V
Pulsed Drain Current-Max (IDM) 70A
Avalanche Energy Rating (Eas) 1500 mJ
RoHS Status ROHS3 Compliant

IXTQ26P20P Документы

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