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IXTQ34N65X2M Технические параметры

IXYS  IXTQ34N65X2M technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3P
Mfr IXYS
Package Tube
Product Status Active
Current - Continuous Drain (Id) @ 25℃ 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Power Dissipation (Max) 43W (Tc)
Vds - Drain-Source Breakdown Voltage 650 V
Typical Turn-On Delay Time 30 ns
Vgs th - Gate-Source Threshold Voltage 5 V
Pd - Power Dissipation 43 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 150 C
Vgs - Gate-Source Voltage - 30 V, + 30 V
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 30
Mounting Styles Through Hole
Forward Transconductance - Min 20 S
Channel Mode Enhancement
Manufacturer IXYS
Свойство продукта Значение свойства
Brand IXYS
Qg - Gate Charge 54 nC
Tradename HiPerFET
Rds On - Drain-Source Resistance 96 mOhms
RoHS Details
Typical Turn-Off Delay Time 68 ns
Id - Continuous Drain Current 34 A
Series -
Operating Temperature -55°C ~ 150°C (TJ)
Packaging Tube
Subcategory MOSFETs
Number of Channels 1 ChannelChannel
FET Type N-Channel
Rds On (Max) @ Id, Vgs 96mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V
Rise Time 48 ns
Drain to Source Voltage (Vdss) 650 V
Vgs (Max) ±30V
Product Type MOSFET
Transistor Type 1 N-Channel
FET Feature -
Product Category MOSFET
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