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IXTQ48N20T Технические параметры

IXYS  IXTQ48N20T technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Package / Case TO-3P-3, SC-65-3
Mounting Type Through Hole
Mount Through Hole
Number of Pins 3Pins
Transistor Element Material SILICON
Power Dissipation (Max) 250W Tc
Turn Off Delay Time 46 ns
Number of Elements 1 Element
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25℃ 48A Tc
Series Trench™
Published 2010
Packaging Tube
Operating Temperature -55°C~175°C TJ
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Pure Tin (Sn)
Свойство продукта Значение свойства
Additional Feature AVALANCHE RATED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 250W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 50m Ω @ 24A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3090pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 48A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.05Ohm
Drain to Source Breakdown Voltage 200V
Avalanche Energy Rating (Eas) 500 mJ
RoHS Status ROHS3 Compliant

IXTQ48N20T Документы

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