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IXYS IXTQ50N25T technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | IXYS | |
| Factory Lead Time | 26 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-3P-3, SC-65-3 | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 50A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 400W Tc | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Published | 2010 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Pure Tin (Sn) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Additional Feature | AVALANCHE RATED | |
| Terminal Position | SINGLE | |
| Pin Count | 3 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 400W | |
| Case Connection | DRAIN | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 60m Ω @ 25A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 1mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 4000pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 78nC @ 10V | |
| Drain to Source Voltage (Vdss) | 250V | |
| Vgs (Max) | ±30V | |
| Continuous Drain Current (ID) | 50A | |
| Drain-source On Resistance-Max | 0.05Ohm | |
| DS Breakdown Voltage-Min | 250V | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |