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IXTQ50N25T Технические параметры

IXYS  IXTQ50N25T technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 26 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 50A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 400W Tc
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Pure Tin (Sn)
Свойство продукта Значение свойства
Additional Feature AVALANCHE RATED
Terminal Position SINGLE
Pin Count 3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 400W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 60m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 4000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V
Drain to Source Voltage (Vdss) 250V
Vgs (Max) ±30V
Continuous Drain Current (ID) 50A
Drain-source On Resistance-Max 0.05Ohm
DS Breakdown Voltage-Min 250V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IXTQ50N25T Документы

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