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IXTQ52P10P Технические параметры

IXYS  IXTQ52P10P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 24 Weeks
Package / Case TO-3P-3, SC-65-3
Mounting Type Through Hole
Mount Through Hole
Number of Pins 3Pins
Transistor Element Material SILICON
Turn Off Delay Time 38 ns
Power Dissipation (Max) 300W Tc
Number of Elements 1 Element
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25℃ 52A Tc
Published 2008
Series PolarP™
Packaging Tube
Operating Temperature -55°C~150°C TJ
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Resistance 50MOhm
Terminal Finish PURE TIN
Свойство продукта Значение свойства
Additional Feature AVALANCHE RATED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 50m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2845pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Rise Time 29ns
Drain to Source Voltage (Vdss) 100V
Vgs (Max) ±20V
Fall Time (Typ) 22 ns
Continuous Drain Current (ID) 52A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -100V
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IXTQ52P10P Документы

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