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IXTQ69N30PM Технические параметры

IXYS  IXTQ69N30PM technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 24 Weeks
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Surface Mount NO
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 25A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 90W Tc
Operating Temperature -55°C~150°C TJ
Published 2012
Pbfree Code yes
Part Status Active
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 49m Ω @ 34.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4960pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 156nC @ 10V
Drain to Source Voltage (Vdss) 300V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 25A
Drain-source On Resistance-Max 0.049Ohm
Pulsed Drain Current-Max (IDM) 200A
DS Breakdown Voltage-Min 300V
Avalanche Energy Rating (Eas) 1500 mJ
Просмотр сходства
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