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IXTR210P10T Технические параметры

IXYS  IXTR210P10T technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 28 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 195A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 595W Tc
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series TrenchP™
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature AVALANCHE RATED, UL RECOGNIZED
Terminal Position SINGLE
Свойство продукта Значение свойства
Reach Compliance Code unknown
Pin Count 3
JESD-30 Code R-PSIP-T3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 105A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 69500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 740nC @ 10V
Drain to Source Voltage (Vdss) 100V
Vgs (Max) ±15V
Continuous Drain Current (ID) 195A
Drain Current-Max (Abs) (ID) 158A
Drain-source On Resistance-Max 0.008Ohm
Pulsed Drain Current-Max (IDM) 800A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 3000 mJ
RoHS Status ROHS3 Compliant
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IXTR210P10T Документы

IXTR210P10T brand manufacturers: IXYS, Anli stock, IXTR210P10T reference price.IXYS. IXTR210P10T parameters, IXTR210P10T Datasheet PDF and pin diagram description download.You can use the IXTR210P10T Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IXTR210P10T pin diagram and circuit diagram and usage method of function,IXTR210P10T electronics tutorials.You can download from the Anli.