Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
IXTT100N25P Технические параметры
IXYS IXTT100N25P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | IXYS | |
| Factory Lead Time | 24 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 100A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 600W Tc | |
| Turn Off Delay Time | 100 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Series | PolarHT™ | |
| Published | 2006 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Resistance | 27MOhm | |
| Terminal Finish | Matte Tin (Sn) | |
| Additional Feature | AVALANCHE RATED | |
| Terminal Form | GULL WING |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | not_compliant | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Pin Count | 4 | |
| JESD-30 Code | R-PSSO-G2 | |
| Qualification Status | Not Qualified | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 600W | |
| Case Connection | DRAIN | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 24m Ω @ 50A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 6300pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 185nC @ 10V | |
| Rise Time | 26ns | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 28 ns | |
| Continuous Drain Current (ID) | 100A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | 250V | |
| Pulsed Drain Current-Max (IDM) | 250A | |
| Avalanche Energy Rating (Eas) | 2000 mJ | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
IXTT100N25P Документы
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ