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IXTT10N100D Технические параметры

IXYS  IXTT10N100D technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 24 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 10A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 400W Tc
Turn Off Delay Time 110 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 400W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.4 Ω @ 10A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Rise Time 85ns
Drain to Source Voltage (Vdss) 1000V
Vgs (Max) ±30V
Fall Time (Typ) 75 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 1kV
Pulsed Drain Current-Max (IDM) 20A
FET Feature Depletion Mode
RoHS Status ROHS3 Compliant

IXTT10N100D Документы

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