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IXTT120N15P Технические параметры

IXYS  IXTT120N15P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 9 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 120A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 600W Tc
Turn Off Delay Time 85 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series PolarHT™
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Свойство продукта Значение свойства
Terminal Form GULL WING
Pin Count 4
JESD-30 Code R-PSSO-G2
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 600W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 16m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4900pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Rise Time 42ns
Vgs (Max) ±20V
Fall Time (Typ) 26 ns
Continuous Drain Current (ID) 120A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 150V
Pulsed Drain Current-Max (IDM) 260A
Avalanche Energy Rating (Eas) 2000 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IXTT120N15P Документы

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