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IXTY14N60X2 Технические параметры
IXYS IXTY14N60X2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | IXYS | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Supplier Device Package | TO-252AA | |
| Mfr | IXYS | |
| Package | Tube | |
| Product Status | Active | |
| Current - Continuous Drain (Id) @ 25℃ | 14A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Power Dissipation (Max) | 180W (Tc) | |
| Base Product Number | IXTY14 | |
| Qualification | - | |
| Continuous Drain Current Id | 14A | |
| Id - Continuous Drain Current | 14 A | |
| Typical Turn-Off Delay Time | 75 ns | |
| RoHS | Details | |
| Rds On - Drain-Source Resistance | 250 mOhms | |
| Qg - Gate Charge | 16.7 nC | |
| Brand | IXYS | |
| Manufacturer | IXYS | |
| Channel Mode | Enhancement | |
| Forward Transconductance - Min | 7 S | |
| Mounting Styles | SMD/SMT | |
| Factory Pack QuantityFactory Pack Quantity | 70 | |
| Minimum Operating Temperature | - 55 C | |
| Unit Weight | 0.011640 oz |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | |
| Maximum Operating Temperature | + 150 C | |
| Transistor Polarity | N-Channel | |
| Pd - Power Dissipation | 180 W | |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V | |
| Typical Turn-On Delay Time | 23 ns | |
| Vds - Drain-Source Breakdown Voltage | 600 V | |
| Series | Ultra X2 | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Packaging | Tube | |
| Subcategory | MOSFETs | |
| Configuration | Single | |
| Number of Channels | 1 ChannelChannel | |
| Power Dissipation | 180W | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 7A, 10V | |
| Vgs(th) (Max) @ Id | 4.5V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 740 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 16.7 nC @ 10 V | |
| Rise Time | 27 ns | |
| Drain to Source Voltage (Vdss) | 600 V | |
| Vgs (Max) | ±30V | |
| Product Type | MOSFET | |
| Transistor Type | 1 N-Channel | |
| Channel Type | N Channel | |
| FET Feature | - | |
| Product Category | MOSFET |
Индекс :
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