Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
IXTY1N80P Технические параметры
IXYS IXTY1N80P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | IXYS | |
| Factory Lead Time | 24 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 1A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 42W Tc | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Series | Polar™ | |
| Published | 2009 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Pure Tin (Sn) | |
| Additional Feature | AVALANCHE RATED | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Pin Count | 4 | |
| JESD-30 Code | R-PSSO-G2 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 42W | |
| Case Connection | DRAIN | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 14 Ω @ 500mA, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 50μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 9nC @ 10V | |
| Drain to Source Voltage (Vdss) | 800V | |
| Vgs (Max) | ±20V | |
| Continuous Drain Current (ID) | 1A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain Current-Max (Abs) (ID) | 1A | |
| Pulsed Drain Current-Max (IDM) | 2A | |
| DS Breakdown Voltage-Min | 800V | |
| Avalanche Energy Rating (Eas) | 75 mJ | |
| RoHS Status | ROHS3 Compliant |
IXTY1N80P Документы
- DatasheetsIXTx1N80P
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ