Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
IXTY1R4N60P Технические параметры
IXYS IXTY1R4N60P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | IXYS | |
| Factory Lead Time | 8 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 1.4A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 50W Tc | |
| Turn Off Delay Time | 25 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Series | PolarHV™ | |
| Published | 2006 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| Additional Feature | AVALANCHE RATED | |
| Voltage - Rated DC | 600V | |
| Terminal Form | GULL WING |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Current Rating | 1.4A | |
| Pin Count | 4 | |
| JESD-30 Code | R-PSSO-G2 | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 50W | |
| Case Connection | DRAIN | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 9 Ω @ 700mA, 10V | |
| Vgs(th) (Max) @ Id | 5.5V @ 25μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 140pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 5.2nC @ 10V | |
| Rise Time | 16ns | |
| Vgs (Max) | ±30V | |
| Fall Time (Typ) | 16 ns | |
| Continuous Drain Current (ID) | 1.4A | |
| Threshold Voltage | 5.5V | |
| JEDEC-95 Code | TO-252AA | |
| Gate to Source Voltage (Vgs) | 30V | |
| Drain-source On Resistance-Max | 9Ohm | |
| Drain to Source Breakdown Voltage | 600V | |
| Avalanche Energy Rating (Eas) | 75 mJ | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
IXTY1R4N60P Документы
- DatasheetsIXT(P,U,Y)1R4N60P
- PCN Obsolescence/ EOLMult Devices OBS 02/Mar/2018
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ