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IXTY1R6N50D2 Технические параметры

IXYS  IXTY1R6N50D2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 24 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 1.6A Tc
Number of Elements 1 Element
Power Dissipation (Max) 100W Tc
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Terminal Finish Tin (Sn)
Additional Feature UL RECOGNIZED
Terminal Position SINGLE
Свойство продукта Значение свойства
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation 100W
Case Connection DRAIN
FET Type N-Channel
Transistor Application AMPLIFIER
Rds On (Max) @ Id, Vgs 2.3 Ω @ 800mA, 0V
Input Capacitance (Ciss) (Max) @ Vds 645pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 23.7nC @ 5V
Drain to Source Voltage (Vdss) 500V
Vgs (Max) ±20V
Continuous Drain Current (ID) 1.6A
Gate to Source Voltage (Vgs) 20V
FET Feature Depletion Mode
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IXTY1R6N50D2 Документы

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