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IXTY26P10T Технические параметры

IXYS  IXTY26P10T technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 24 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 26A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 150W Tc
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series TrenchP™
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Terminal Position SINGLE
Terminal Form GULL WING
Свойство продукта Значение свойства
Pin Count 4
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 150W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 90m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3820pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V
Drain to Source Voltage (Vdss) 100V
Vgs (Max) ±15V
Continuous Drain Current (ID) 26A
Drain-source On Resistance-Max 0.09Ohm
Pulsed Drain Current-Max (IDM) 80A
Avalanche Energy Rating (Eas) 300 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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IXTY26P10T Документы

IXTY26P10T brand manufacturers: IXYS, Anli stock, IXTY26P10T reference price.IXYS. IXTY26P10T parameters, IXTY26P10T Datasheet PDF and pin diagram description download.You can use the IXTY26P10T Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IXTY26P10T pin diagram and circuit diagram and usage method of function,IXTY26P10T electronics tutorials.You can download from the Anli.