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IXTY2N80P Технические параметры
IXYS IXTY2N80P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | IXYS | |
| Factory Lead Time | 8 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 2A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 70W Tc | |
| Turn Off Delay Time | 53 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Series | PolarHV™ | |
| Published | 2006 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| Terminal Finish | Matte Tin (Sn) | |
| Additional Feature | AVALANCHE RATED | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Pin Count | 4 | |
| JESD-30 Code | R-PSSO-G2 | |
| Qualification Status | Not Qualified | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 70W | |
| Case Connection | DRAIN | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 6 Ω @ 1A, 10V | |
| Vgs(th) (Max) @ Id | 5.5V @ 50μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 440pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 10.6nC @ 10V | |
| Rise Time | 35ns | |
| Vgs (Max) | ±30V | |
| Fall Time (Typ) | 28 ns | |
| Continuous Drain Current (ID) | 2A | |
| JEDEC-95 Code | TO-252AA | |
| Gate to Source Voltage (Vgs) | 30V | |
| Drain Current-Max (Abs) (ID) | 2A | |
| Drain-source On Resistance-Max | 6Ohm | |
| Drain to Source Breakdown Voltage | 800V | |
| Pulsed Drain Current-Max (IDM) | 4A | |
| Avalanche Energy Rating (Eas) | 100 mJ | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
IXTY2N80P Документы
- DatasheetsIXT(A,P,U,Y)2N80P IXTY2N80P-IXYS-datasheet-11720698.pdf
- PCN Obsolescence/ EOLMule Devices EOL 21/Mar/2018
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