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IXXH30N60B3 Технические параметры

IXYS  IXXH30N60B3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка IXYS
Factory Lead Time 28 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Collector-Emitter Breakdown Voltage 600V
Test Conditions 400V, 24A, 10 Ω, 15V
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series GenX3™, XPT™
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 270W
Свойство продукта Значение свойства
Input Type Standard
Power - Max 270W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.85V
Max Collector Current 60A
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 24A
IGBT Type PT
Gate Charge 39nC
Current - Collector Pulsed (Icm) 115A
Td (on/off) @ 25°C 23ns/97ns
Switching Energy 550μJ (on), 500μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
RoHS Status ROHS3 Compliant
Просмотр сходства
IXXH30N60B3 brand manufacturers: IXYS, Anli stock, IXXH30N60B3 reference price.IXYS. IXXH30N60B3 parameters, IXXH30N60B3 Datasheet PDF and pin diagram description download.You can use the IXXH30N60B3 Transistors - IGBTs - Single, DSP Datesheet PDF, find IXXH30N60B3 pin diagram and circuit diagram and usage method of function,IXXH30N60B3 electronics tutorials.You can download from the Anli.