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IXXH60N65C4 Технические параметры
IXYS IXXH60N65C4 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | IXYS | |
| Factory Lead Time | 28 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Collector-Emitter Breakdown Voltage | 650V | |
| Test Conditions | 400V, 60A, 5 Ω, 15V | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tube | |
| Series | GenX4™, XPT™ | |
| Published | 2014 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Power Dissipation | 455W |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Element Configuration | Single | |
| Power Dissipation | 455W | |
| Input Type | Standard | |
| Polarity/Channel Type | N-CHANNEL | |
| Collector Emitter Voltage (VCEO) | 2.2V | |
| Max Collector Current | 118A | |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 60A | |
| IGBT Type | PT | |
| Gate Charge | 94nC | |
| Current - Collector Pulsed (Icm) | 240A | |
| Td (on/off) @ 25°C | 37ns/133ns | |
| Switching Energy | 3.2mJ (on), 830μJ (off) | |
| Gate-Emitter Voltage-Max | 20V | |
| Gate-Emitter Thr Voltage-Max | 6.5V | |
| RoHS Status | ROHS3 Compliant |
IXXH60N65C4 Документы
- DatasheetsIXXH60N65C4
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