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IXXH75N60C3D1 Технические параметры

IXYS  IXXH75N60C3D1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка IXYS
Factory Lead Time 28 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Number of Elements 1 Element
Test Conditions 400V, 60A, 5 Ω, 15V
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series GenX3™, XPT™
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Max Power Dissipation 750W
Terminal Position SINGLE
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Свойство продукта Значение свойства
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 750W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.3V
Max Collector Current 150A
Reverse Recovery Time 25 ns
JEDEC-95 Code TO-247AD
Turn On Time 105 ns
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 60A
Turn Off Time-Nom (toff) 185 ns
IGBT Type PT
Gate Charge 107nC
Current - Collector Pulsed (Icm) 300A
Td (on/off) @ 25°C 35ns/90ns
Switching Energy 1.6mJ (on), 800μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
RoHS Status ROHS3 Compliant
Просмотр сходства
IXXH75N60C3D1 brand manufacturers: IXYS, Anli stock, IXXH75N60C3D1 reference price.IXYS. IXXH75N60C3D1 parameters, IXXH75N60C3D1 Datasheet PDF and pin diagram description download.You can use the IXXH75N60C3D1 Transistors - IGBTs - Single, DSP Datesheet PDF, find IXXH75N60C3D1 pin diagram and circuit diagram and usage method of function,IXXH75N60C3D1 electronics tutorials.You can download from the Anli.