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IXXN110N65B4H1 Технические параметры
IXYS IXXN110N65B4H1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Modules | |
| Марка | IXYS | |
| Factory Lead Time | 18 Weeks | |
| Mount | Chassis Mount | |
| Mounting Type | Chassis Mount | |
| Package / Case | SOT-227-4, miniBLOC | |
| Weight | 30.000004g | |
| Collector-Emitter Breakdown Voltage | 650V | |
| Collector-Emitter Saturation Voltage | 2.1V | |
| Number of Elements | 1 Element | |
| Operating Temperature | -55°C~175°C TJ | |
| Series | XPT™, GenX4™ | |
| Published | 2013 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Max Power Dissipation | 750W | |
| Base Part Number | 110N65 | |
| Configuration | Single | |
| Power - Max | 750W | |
| Input | Standard | |
| Collector Emitter Voltage (VCEO) | 2.1V | |
| Max Collector Current | 215A | |
| Current - Collector Cutoff (Max) | 50μA | |
| Input Capacitance | 3.65nF | |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 110A | |
| IGBT Type | PT | |
| NTC Thermistor | No | |
| Gate-Emitter Voltage-Max | 20V | |
| Input Capacitance (Cies) @ Vce | 3.65nF @ 25V | |
| RoHS Status | ROHS3 Compliant |
IXXN110N65B4H1 Документы
- DatasheetsIXXN110N65B4H1
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