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IXXX100N60C3H1 Технические параметры
IXYS IXXX100N60C3H1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | IXYS | |
| Factory Lead Time | 8 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Collector-Emitter Breakdown Voltage | 600V | |
| Operating Temperature (Max.) | 150°C | |
| Test Conditions | 360V, 70A, 2 Ω, 15V | |
| Packaging | Tube | |
| Series | GenX3™, XPT™ | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Terminal Finish | Matte Tin (Sn) | |
| Max Power Dissipation | 695W |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Reach Compliance Code | not_compliant | |
| Input Type | Standard | |
| Power - Max | 695W | |
| Polarity/Channel Type | N-CHANNEL | |
| Collector Emitter Voltage (VCEO) | 2.2V | |
| Max Collector Current | 170A | |
| Reverse Recovery Time | 140 ns | |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 70A | |
| IGBT Type | PT | |
| Gate Charge | 150nC | |
| Current - Collector Pulsed (Icm) | 340A | |
| Td (on/off) @ 25°C | 30ns/90ns | |
| Switching Energy | 2mJ (on), 950μJ (off) | |
| Gate-Emitter Voltage-Max | 20V | |
| Gate-Emitter Thr Voltage-Max | 5.5V | |
| RoHS Status | ROHS3 Compliant |
Индекс :
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