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IXXX110N65B4H1 Технические параметры

IXYS  IXXX110N65B4H1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка IXYS
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Collector-Emitter Breakdown Voltage 650V
Test Conditions 400V, 55A, 2 Ω, 15V
Turn Off Delay Time 146 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series GenX4™, XPT™
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 880W
Reach Compliance Code not_compliant
Свойство продукта Значение свойства
Base Part Number 110N65
Element Configuration Single
Power Dissipation 880W
Input Type Standard
Turn On Delay Time 26 ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 240A
Reverse Recovery Time 100 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 110A
IGBT Type PT
Gate Charge 183nC
Current - Collector Pulsed (Icm) 630A
Td (on/off) @ 25°C 38ns/156ns
Switching Energy 2.2mJ (on), 1.05mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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IXXX110N65B4H1 Документы

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