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IXXX160N65B4 Технические параметры

IXYS  IXXX160N65B4 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка IXYS
Factory Lead Time 28 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Collector-Emitter Breakdown Voltage 650V
Test Conditions 400V, 80A, 1 Ω, 15V
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series GenX4™, XPT™
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 940W
Свойство продукта Значение свойства
Reach Compliance Code not_compliant
Base Part Number 160N65
Element Configuration Single
Power Dissipation 940W
Input Type Standard
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.8V
Max Collector Current 310A
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 160A
IGBT Type PT
Gate Charge 425nC
Current - Collector Pulsed (Icm) 860A
Td (on/off) @ 25°C 52ns/220ns
Switching Energy 3.3mJ (on), 1.88mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
RoHS Status ROHS3 Compliant
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