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IXXX160N65C4 Технические параметры

IXYS  IXXX160N65C4 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка IXYS
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Collector-Emitter Breakdown Voltage 650V
Test Conditions 400V, 80A, 1 Ω, 15V
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series GenX4™, XPT™
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 940W
Свойство продукта Значение свойства
Base Part Number 160N65
Element Configuration Single
Power Dissipation 940W
Input Type Standard
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 290A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 160A
IGBT Type PT
Gate Charge 422nC
Current - Collector Pulsed (Icm) 800A
Td (on/off) @ 25°C 52ns/197ns
Switching Energy 3.5mJ (on), 1.3mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
RoHS Status ROHS3 Compliant
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IXXX160N65C4 Документы

IXXX160N65C4 brand manufacturers: IXYS, Anli stock, IXXX160N65C4 reference price.IXYS. IXXX160N65C4 parameters, IXXX160N65C4 Datasheet PDF and pin diagram description download.You can use the IXXX160N65C4 Transistors - IGBTs - Single, DSP Datesheet PDF, find IXXX160N65C4 pin diagram and circuit diagram and usage method of function,IXXX160N65C4 electronics tutorials.You can download from the Anli.