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IXYH20N65B3 Технические параметры
IXYS IXYH20N65B3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | IXYS | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Supplier Device Package | TO-247AD | |
| Mfr | IXYS | |
| Package | Tube | |
| Product Status | Active | |
| Current-Collector (Ic) (Max) | 58 A | |
| Test Conditions | 400V, 20A, 20Ohm, 15V | |
| Factory Pack QuantityFactory Pack Quantity | 30 | |
| Manufacturer | IXYS | |
| Brand | IXYS | |
| RoHS | Details | |
| Maximum Gate Emitter Voltage | - 20 V, + 20 V | |
| Risk Rank | 5.24 | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Part Life Cycle Code | Active |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Manufacturer Part Number | IXYH20N65B3 | |
| Package Description | , | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Packaging | Tube | |
| Subcategory | IGBTs | |
| Reach Compliance Code | unknown | |
| Input Type | Standard | |
| Power - Max | 230 W | |
| Product Type | IGBT Transistors | |
| Voltage - Collector Emitter Breakdown (Max) | 650 V | |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 20A | |
| IGBT Type | PT | |
| Gate Charge | 29 nC | |
| Current - Collector Pulsed (Icm) | 108 A | |
| Td (on/off) @ 25°C | 12ns/103ns | |
| Switching Energy | 500μJ (on), 450μJ (off) | |
| Reverse Recovery Time (trr) | 25 ns | |
| Product Category | IGBT Transistors |
Индекс :
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