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IXYH40N65C3H1 Технические параметры
IXYS IXYH40N65C3H1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | IXYS | |
| Factory Lead Time | 14 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Number of Pins | 3Pins | |
| Weight | 38.000013g | |
| Collector-Emitter Breakdown Voltage | 650V | |
| Test Conditions | 400V, 30A, 10 Ω, 15V | |
| Packaging | Tube | |
| Series | GenX3™, XPT™ | |
| Published | 2013 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Max Operating Temperature | 175°C | |
| Min Operating Temperature | -55°C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Max Power Dissipation | 300W | |
| Element Configuration | Single | |
| Input Type | Standard | |
| Polarity/Channel Type | N-CHANNEL | |
| Collector Emitter Voltage (VCEO) | 2.2V | |
| Max Collector Current | 80A | |
| Reverse Recovery Time | 120 ns | |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 40A | |
| IGBT Type | PT | |
| Gate Charge | 70nC | |
| Current - Collector Pulsed (Icm) | 180A | |
| Td (on/off) @ 25°C | 26ns/106ns | |
| Switching Energy | 860μJ (on), 400μJ (off) | |
| Gate-Emitter Voltage-Max | 20V | |
| Gate-Emitter Thr Voltage-Max | 6.5V | |
| REACH SVHC | No SVHC | |
| RoHS Status | ROHS3 Compliant |
IXYH40N65C3H1 Документы
- Datasheets650V XPT? IGBTs Brief
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