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IXYP10N65C3D1 Технические параметры

IXYS  IXYP10N65C3D1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка IXYS
Factory Lead Time 24 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Collector-Emitter Breakdown Voltage 650V
Test Conditions 400V, 10A, 50 Ω, 15V
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series GenX3™, XPT™
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Свойство продукта Значение свойства
Max Power Dissipation 160W
Reach Compliance Code unknown
Input Type Standard
Power - Max 160W
Collector Emitter Voltage (VCEO) 2.5V
Max Collector Current 30A
Reverse Recovery Time 170 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 10A
IGBT Type PT
Gate Charge 18nC
Current - Collector Pulsed (Icm) 54A
Td (on/off) @ 25°C 20ns/77ns
Switching Energy 240μJ (on), 110μJ (off)
RoHS Status ROHS3 Compliant
Просмотр сходства

IXYP10N65C3D1 Документы

IXYP10N65C3D1 brand manufacturers: IXYS, Anli stock, IXYP10N65C3D1 reference price.IXYS. IXYP10N65C3D1 parameters, IXYP10N65C3D1 Datasheet PDF and pin diagram description download.You can use the IXYP10N65C3D1 Transistors - IGBTs - Single, DSP Datesheet PDF, find IXYP10N65C3D1 pin diagram and circuit diagram and usage method of function,IXYP10N65C3D1 electronics tutorials.You can download from the Anli.