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IXZ210N50L Технические параметры
IXYS IXZ210N50L technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | IXYS | |
| Package / Case | 6-SMD Module | |
| Surface Mount | YES | |
| Number of Pins | 6Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Packaging | Tube | |
| Published | 2004 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Max Operating Temperature | 175°C | |
| Max Power Dissipation | 470W | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Frequency | 175MHz | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | ISOLATED | |
| Transistor Application | AMPLIFIER | |
| Rise Time | 4ns | |
| Drain to Source Voltage (Vdss) | 500V | |
| Transistor Type | N-Channel | |
| Continuous Drain Current (ID) | 10A | |
| Gain | 16dB | |
| Power - Output | 200W | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Drain to Source Resistance | 1Ohm | |
| Voltage - Test | 50V | |
| REACH SVHC | No SVHC | |
| RoHS Status | RoHS Compliant |
IXZ210N50L Документы
- PCN Obsolescence/ EOLMultiple Devices 01/May/2012
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