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MIEB101H1200EH Технические параметры

IXYS  MIEB101H1200EH technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Modules
Марка IXYS
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case E3
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Number of Elements 4 Elements
Operating Temperature -40°C~125°C TJ
Packaging Bulk
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 14Terminations
Additional Feature UL RECOGNIZED
Max Power Dissipation 630W
Terminal Position UPPER
Terminal Form UNSPECIFIED
JESD-30 Code R-PUFM-X14
Configuration Full Bridge Inverter
Свойство продукта Значение свойства
Case Connection ISOLATED
Power - Max 630W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 183A
Current - Collector Cutoff (Max) 300μA
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 7.43nF
Turn On Time 175 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 100A
Turn Off Time-Nom (toff) 700 ns
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 7.43nF @ 25V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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MIEB101H1200EH Документы

MIEB101H1200EH brand manufacturers: IXYS, Anli stock, MIEB101H1200EH reference price.IXYS. MIEB101H1200EH parameters, MIEB101H1200EH Datasheet PDF and pin diagram description download.You can use the MIEB101H1200EH Transistors - IGBTs - Modules, DSP Datesheet PDF, find MIEB101H1200EH pin diagram and circuit diagram and usage method of function,MIEB101H1200EH electronics tutorials.You can download from the Anli.