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MII100-12A3 Технические параметры

IXYS  MII100-12A3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Modules
Марка IXYS
Factory Lead Time 24 Weeks
Mount Chassis Mount, Panel, Screw
Mounting Type Chassis Mount
Package / Case Y4-M5
Number of Pins 7Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Collector-Emitter Saturation Voltage 2.2V
Number of Elements 2 Elements
Turn Off Delay Time 650 ns
Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2000
Pbfree Code yes
Part Status Active
Number of Terminations 7Terminations
ECCN Code EAR99
Additional Feature UL RECOGNIZED
Voltage - Rated DC 1.2kV
Max Power Dissipation 560W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Current Rating 135A
Base Part Number MII
Configuration Half Bridge
Свойство продукта Значение свойства
Element Configuration Dual
Case Connection ISOLATED
Turn On Delay Time 100 ns
Transistor Application MOTOR CONTROL
Rise Time 50ns
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 135A
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Reverse Voltage 1.2kV
Input Capacitance 5.5nF
Turn On Time 150 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 75A
Turn Off Time-Nom (toff) 700 ns
IGBT Type NPT
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 5.5nF @ 25V
VCEsat-Max 3 V
Height 30mm
Length 94mm
Width 34mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

MII100-12A3 Документы

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