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MIXA61H1200ED Технические параметры

IXYS  MIXA61H1200ED technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Modules
Марка IXYS
Factory Lead Time 25 Weeks
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case E2
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Collector-Emitter Saturation Voltage 1.8V
Number of Elements 4 Elements
Operating Temperature -40°C~125°C TJ
Packaging Bulk
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 12Terminations
Additional Feature UL RECOGNIZED
Max Power Dissipation 290W
Terminal Position UPPER
Свойство продукта Значение свойства
Terminal Form UNSPECIFIED
JESD-30 Code R-XUFM-X12
Configuration Full Bridge Inverter
Power Dissipation 290W
Case Connection ISOLATED
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 85A
Current - Collector Cutoff (Max) 500μA
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 110 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 55A
Turn Off Time-Nom (toff) 350 ns
IGBT Type PT
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
RoHS Status ROHS3 Compliant
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MIXA61H1200ED Документы

MIXA61H1200ED brand manufacturers: IXYS, Anli stock, MIXA61H1200ED reference price.IXYS. MIXA61H1200ED parameters, MIXA61H1200ED Datasheet PDF and pin diagram description download.You can use the MIXA61H1200ED Transistors - IGBTs - Modules, DSP Datesheet PDF, find MIXA61H1200ED pin diagram and circuit diagram and usage method of function,MIXA61H1200ED electronics tutorials.You can download from the Anli.