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MUBW50-12E8 Технические параметры
IXYS MUBW50-12E8 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Modules | |
| Марка | IXYS | |
| Mount | Chassis Mount | |
| Mounting Type | Chassis Mount | |
| Package / Case | E3 | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 1.2kV | |
| Number of Elements | 7 Elements | |
| Operating Temperature | -40°C~125°C TJ | |
| Packaging | Box | |
| Published | 2003 | |
| JESD-609 Code | e3 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 35Terminations | |
| Terminal Finish | Tin (Sn) - with Nickel (Ni) barrier | |
| Max Power Dissipation | 350W | |
| Terminal Position | UPPER | |
| Terminal Form | UNSPECIFIED | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Base Part Number | MUBW | |
| Pin Count | 35 | |
| Qualification Status | Not Qualified | |
| Configuration | Three Phase Inverter with Brake | |
| Case Connection | ISOLATED | |
| Power - Max | 350W | |
| Transistor Application | POWER CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Input | Three Phase Bridge Rectifier | |
| Collector Emitter Voltage (VCEO) | 2.4V | |
| Max Collector Current | 90A | |
| Current - Collector Cutoff (Max) | 800μA | |
| Voltage - Collector Emitter Breakdown (Max) | 1200V | |
| Reverse Voltage | 1.6kV | |
| Input Capacitance | 3.8nF | |
| Turn On Time | 130 ns | |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 50A | |
| Turn Off Time-Nom (toff) | 710 ns | |
| NTC Thermistor | Yes | |
| Gate-Emitter Voltage-Max | 20V | |
| Input Capacitance (Cies) @ Vce | 3.8nF @ 25V | |
| RoHS Status | RoHS Compliant |
MUBW50-12E8 Документы
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