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MWI100-12A8 Технические параметры
IXYS MWI100-12A8 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Modules | |
| Марка | IXYS | |
| Factory Lead Time | 20 Weeks | |
| Package / Case | E3 | |
| Mounting Type | Chassis Mount | |
| Mount | Chassis Mount | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 1.2kV | |
| Number of Elements | 6 Elements | |
| Published | 2007 | |
| Operating Temperature | -40°C~125°C TJ | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 19Terminations | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Additional Feature | UL RECOGNIZED | |
| Max Power Dissipation | 640W | |
| Terminal Position | UPPER | |
| Terminal Form | UNSPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Base Part Number | MWI | |
| Pin Count | 19 | |
| JESD-30 Code | R-XUFM-X19 | |
| Configuration | Three Phase Inverter | |
| Case Connection | ISOLATED | |
| Power - Max | 640W | |
| Transistor Application | POWER CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Input | Standard | |
| Collector Emitter Voltage (VCEO) | 2.6V | |
| Max Collector Current | 160A | |
| Current - Collector Cutoff (Max) | 6.3mA | |
| Voltage - Collector Emitter Breakdown (Max) | 1200V | |
| Input Capacitance | 6.5nF | |
| Turn On Time | 160 ns | |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 100A | |
| Turn Off Time-Nom (toff) | 690 ns | |
| IGBT Type | NPT | |
| NTC Thermistor | No | |
| Gate-Emitter Voltage-Max | 20V | |
| Input Capacitance (Cies) @ Vce | 6.5nF @ 25V | |
| RoHS Status | ROHS3 Compliant |
MWI100-12A8 Документы
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