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MWI300-12E9 Технические параметры

IXYS  MWI300-12E9 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Modules
Марка IXYS
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case E+
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Number of Elements 6 Elements
Operating Temperature -40°C~125°C TJ
Packaging Bulk
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 17Terminations
Terminal Finish Tin (Sn) - with Nickel (Ni) barrier
Additional Feature UL RECOGNIZED
Max Power Dissipation 2.1kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Base Part Number MWI
Pin Count 29
JESD-30 Code R-XUFM-X17
Qualification Status Not Qualified
Configuration Three Phase
Case Connection ISOLATED
Power - Max 2100W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.4V
Max Collector Current 530A
Current - Collector Cutoff (Max) 1mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 22nF
Turn On Time 280 ns
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 300A
Turn Off Time-Nom (toff) 770 ns
IGBT Type NPT
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 22nF @ 25V
RoHS Status RoHS Compliant

MWI300-12E9 Документы

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