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MWI50-12E6K Технические параметры
IXYS MWI50-12E6K technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Modules | |
| Марка | IXYS | |
| Mount | Chassis Mount | |
| Mounting Type | Chassis Mount | |
| Package / Case | E1 | |
| Number of Pins | 1Pin | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 1.2kV | |
| Number of Elements | 6 Elements | |
| Operating Temperature | -40°C~125°C TJ | |
| Packaging | Bulk | |
| Published | 2007 | |
| JESD-609 Code | e3 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 19Terminations | |
| Terminal Finish | Tin (Sn) | |
| Additional Feature | UL RECOGNIZED | |
| Max Power Dissipation | 210W | |
| Terminal Position | UPPER | |
| Terminal Form | UNSPECIFIED | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | MWI | |
| Pin Count | 24 | |
| Qualification Status | Not Qualified | |
| Configuration | Three Phase Inverter | |
| Case Connection | ISOLATED | |
| Power - Max | 210W | |
| Transistor Application | POWER CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Input | Standard | |
| Collector Emitter Voltage (VCEO) | 2.9V | |
| Max Collector Current | 51A | |
| Current - Collector Cutoff (Max) | 300μA | |
| Voltage - Collector Emitter Breakdown (Max) | 1200V | |
| Input Capacitance | 2nF | |
| Turn On Time | 140 ns | |
| Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 35A | |
| Turn Off Time-Nom (toff) | 490 ns | |
| NTC Thermistor | Yes | |
| Input Capacitance (Cies) @ Vce | 2nF @ 25V | |
| RoHS Status | RoHS Compliant |
MWI50-12E6K Документы
- DatasheetsMWI50-12E6K
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