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VMM650-01F Технические параметры
IXYS VMM650-01F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | IXYS | |
| Mount | Chassis Mount, Screw | |
| Mounting Type | Chassis Mount | |
| Package / Case | Y3-Li | |
| Number of Pins | 6Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 400 ns | |
| Operating Temperature | -40°C~150°C TJ | |
| Packaging | Bulk | |
| Series | HiPerFET™ | |
| Published | 2004 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 9Terminations | |
| ECCN Code | EAR99 | |
| Terminal Position | UPPER | |
| Terminal Form | UNSPECIFIED | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Base Part Number | VMM | |
| JESD-30 Code | R-PUFM-X9 | |
| Qualification Status | Not Qualified | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | ISOLATED | |
| FET Type | 2 N-Channel (Dual) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 2.2m Ω @ 500A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 30mA | |
| Gate Charge (Qg) (Max) @ Vgs | 1440nC @ 10V | |
| Rise Time | 250ns | |
| Drain to Source Voltage (Vdss) | 100V | |
| Fall Time (Typ) | 250 ns | |
| Continuous Drain Current (ID) | 680A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain-source On Resistance-Max | 0.0018Ohm | |
| Drain to Source Breakdown Voltage | 100V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Standard | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
VMM650-01F Документы
- DatasheetsVMM650-01F VMM650-01F-IXYS-datasheet-11839743.pdf
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