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DE150-102N02A Технические параметры
IXYS Integrated Circuits Division / Littelfuse DE150-102N02A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | ||
| Package / Case | 6-SMD, Flat Lead Exposed Pad | |
| Supplier Device Package | DE150 | |
| EU RoHS | Compliant | |
| ECCN (US) | EAR99 | |
| HTS | 8541.29.00.75 | |
| Automotive | No | |
| PPAP | No | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| Maximum Drain Source Voltage (V) | 1000 | |
| Maximum Gate Source Voltage (V) | ±20 | |
| Maximum Gate Threshold Voltage (V) | 4.5 | |
| Maximum Continuous Drain Current (A) | 2 | |
| Maximum Gate Source Leakage Current (nA) | 100 | |
| Maximum IDSS (uA) | 50 | |
| Typical Gate Charge @ Vgs (nC) | 23@10V | |
| Typical Input Capacitance @ Vds (pF) | 500@800V | |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 3@800V | |
| Typical Output Capacitance @ Vds (pF) | 150@800V | |
| Maximum Power Dissipation (mW) | 200000 | |
| Maximum Frequency (MHz) | 30 | |
| Minimum Operating Temperature (°C) | -55 | |
| Maximum Operating Temperature (°C) | 175 | |
| Package | Tube | |
| Base Product Number | DE150 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Mfr | IXYS-RF | |
| Product Status | Obsolete | |
| Voltage Rated | 1000 V | |
| Package Description | , | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Rohs Code | Yes | |
| Manufacturer Part Number | DE150-102N02A | |
| Manufacturer | Littelfuse Inc | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Risk Rank | 5.74 | |
| Series | DE | |
| Part Status | Obsolete | |
| Current Rating (Amps) | 2A | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Frequency | - | |
| Pin Count | 150 | |
| Qualification Status | Not Qualified | |
| Configuration | Single Quad Source | |
| Transistor Type | N-Channel | |
| Gain | - | |
| Channel Type | N | |
| Power - Output | 200W | |
| Noise Figure | - | |
| Highest Frequency Band | VERY HIGH FREQUENCY BAND |
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