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IXFM12N100 Технические параметры

IXYS Integrated Circuits Division / Littelfuse  IXFM12N100 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Material Si
EU RoHS Compliant
Automotive No
PPAP No
Category Power MOSFET
Process Technology HDMOS
Channel Mode Enhancement
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 1000
Maximum Gate Source Voltage (V) ±20
Maximum Continuous Drain Current (A) 12
Typical Gate Charge @ Vgs (nC) 122@10V
Typical Gate Charge @ 10V (nC) 122
Typical Input Capacitance @ Vds (pF) 4000@25V
Maximum Power Dissipation (mW) 300000
Typical Fall Time (ns) 32
Typical Rise Time (ns) 33
Typical Turn-Off Delay Time (ns) 62
Typical Turn-On Delay Time (ns) 21
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Свойство продукта Значение свойства
Mounting Through Hole
Package Height 11.4(Max)
Package Width 26.66
Package Length 30.15 + 9.54(Max)
PCB changed 2
Tab Tab
Supplier Package TO-204AA
RoHS Compliant
Turn Off Delay Time 62 ns
Part Status Obsolete
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Pin Count 3
Configuration Single
Element Configuration Single
Power Dissipation 300 W
Rise Time 33 ns
Continuous Drain Current (ID) 12 A
Gate to Source Voltage (Vgs) 20 V
Drain to Source Breakdown Voltage 1 kV
Channel Type N
Drain to Source Resistance 1.05 Ω
Просмотр сходства
IXFM12N100 brand manufacturers: IXYS Integrated Circuits Division / Littelfuse, Anli stock, IXFM12N100 reference price.IXYS Integrated Circuits Division / Littelfuse. IXFM12N100 parameters, IXFM12N100 Datasheet PDF and pin diagram description download.You can use the IXFM12N100 Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find IXFM12N100 pin diagram and circuit diagram and usage method of function,IXFM12N100 electronics tutorials.You can download from the Anli.