Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
IXFM20N60 Технические параметры
IXYS Integrated Circuits Division / Littelfuse IXFM20N60 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Surface Mount | NO | |
| Material | Si | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| EU RoHS | Compliant | |
| ECCN (US) | EAR99 | |
| HTS | 8541.29.00.95 | |
| Automotive | No | |
| PPAP | No | |
| Category | Power MOSFET | |
| Process Technology | HiperFET | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| Maximum Drain Source Voltage (V) | 600 | |
| Maximum Gate Source Voltage (V) | ±20 | |
| Maximum Continuous Drain Current (A) | 20 | |
| Typical Gate Charge @ Vgs (nC) | 151@10V | |
| Typical Gate Charge @ 10V (nC) | 151 | |
| Typical Input Capacitance @ Vds (pF) | 4500@25V | |
| Maximum Power Dissipation (mW) | 300000 | |
| Typical Fall Time (ns) | 40 | |
| Typical Rise Time (ns) | 43 | |
| Typical Turn-Off Delay Time (ns) | 70 | |
| Typical Turn-On Delay Time (ns) | 20 | |
| Minimum Operating Temperature (°C) | -55 | |
| Maximum Operating Temperature (°C) | 150 | |
| Mounting | Through Hole | |
| Package Height | 11.4(Max) | |
| Package Width | 26.66(Max) | |
| Package Length | 39.12(Max) | |
| PCB changed | 2 | |
| Tab | Tab | |
| Supplier Package | TO-204AE | |
| Package Description | FLANGE MOUNT, O-MBFM-P2 | |
| Package Style | FLANGE MOUNT | |
| Package Body Material | METAL |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | IXFM20N60 | |
| Package Shape | ROUND | |
| Manufacturer | IXYS Corporation | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | IXYS CORP | |
| Risk Rank | 5.83 | |
| Part Package Code | TO-3 | |
| Drain Current-Max (ID) | 20 A | |
| Pbfree Code | Yes | |
| Part Status | Obsolete | |
| Additional Feature | AVALANCHE RATED | |
| Subcategory | FET General Purpose Power | |
| Terminal Position | BOTTOM | |
| Terminal Form | PIN/PEG | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Pin Count | 3 | |
| JESD-30 Code | O-MBFM-P2 | |
| Qualification Status | Not Qualified | |
| Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-204 | |
| Drain Current-Max (Abs) (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.35 Ω | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| DS Breakdown Voltage-Min | 600 V | |
| Channel Type | N | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 300 W | |
| Power Dissipation Ambient-Max | 300 W |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ